REPUBLIC OF SERBIA

MINISTRY OF DEFENCE

www.mod.gov.rs

MINISTRY OF DEFENCE

Material Resources Sector

Defensive Technologies Department

Military Technical Institute

www.vti.mod.gov.rs

A comparison of different convex corner compensation structures applicable in anisotropic wet chemical etching of {100} oriented silicon

Vesna Jović

Institute of Chemistry, Technology and Metallurgy, University of Belgrade, Serbia, vjovic@nanosys.ihtm.bg.ac.rs

Jelena Lamovec

Institute of Chemistry, Technology and Metallurgy, University of Belgrade, Serbia, jejal@nanosys.ihtm.bg.ac.rs

Milče Smiljanić

Institute of Chemistry, Technology and Metallurgy, University of Belgrade, Serbia, smilce@nanosys.ihtm.bg.ac.rs

Žarko Lazić

Institute of Chemistry, Technology and Metallurgy, University of Belgrade, Serbia, zlazic@nanosys.ihtm.bg.ac.rs

BOGDAN POPOVIĆ

Institute of Chemistry, Technology and Metallurgy, University of Belgrade, Serbia, bpopovic@nanosys.ihtm.bg.ac.rs

PREDRAG POLJAK

Institute of Chemistry, Technology and Metallurgy, University of Belgrade, Serbia, predrag.poljak@nanosys.ihtm.bg.ac.rs

Abstract: This paper presents fabrication of microcantilevers on {100} oriented Si substrate by bulk micromachining. Two types of CCC (Convex Corner Compensation) structures, namely á100ñ oriented simple beam and structure using symmetric rectangular blocks oriented in the á110ñ direction at the apex of the square peg have been analyzed. Etching solution has been KOH water solution (80 wt. %) at etching temperature of 80 ^oC. Detailed construction and etching behavior of both structures have been given and explained.

Keywords: anisotropic wet chemical etching, bulk silicon micromachining, convex corner compensation, KOH etching solution, microcantilevers.