REPUBLIC OF SERBIA

MINISTRY OF DEFENCE

www.mod.gov.rs

MINISTRY OF DEFENCE

Material Resources Sector

Defensive Technologies Department

Military Technical Institute

www.vti.mod.gov.rs

solid state L-band high power amplifier USing gan hemt technology

zvonko radosavljević

Millitary Tehnical Institut, Belgrade, zvonko.radosavljevic@gmail.com

dejan ivković,

Millitary Tehnical Institut, Belgrade, divkovic555@gmail.com

dRAGAN  NIKoLić,

Millitary Tehnical Institut, Belgrade, nikolicdragansiki@gmail.com

Abstract: In this paper, we design a modular L-band high speed pulsed high power amplifier (HPA) using GaN HEMT technology. One module of power amplifiers have the high voltage and high speed switching circuit, based of class-AB power amplifier. The source and load impendence is balanced from eight equal modulus and calculated by performing optimal output peak power. The functional model PA provides power added frequency (PAE) of 61% together with power gain of 11 dB at frequency band 1.2-1.3 GHz.  As results of test, after outputs combining, the total outputs peak power is 800W obtained at 1.3 GHz carrier frequency.

Keywords: L-band radar transmitter, HPA, GaN FET.